View TGA1073C_226332.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
* * * * * * 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
*
The TriQuint TGA1073C-SCC is a two stage PA MMIC design using TriQuint's proven 0.25 m Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint systems. The two-stage design consists of two 400 m input devices driving four 400 m output devices. The TGA1073C provides 24 dBm of output power at 1dB gain compression and 26 dBm saturated output power across the 36-40 GHz with a typical small signal gain of 15 dB. The TGA1073C requires a minimum of off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
Typical Performance, 36-40 GHz
33
Point-to-Point Radio Point-to-Multipoint Radio
TGA1073C Typical RF Performance (Fixtured)
20
*
Gain and Return Loss (dB)
15 10 5 0 -5 -10 -15 -20 -25 33 34 35 36 37 38 39 40
S21
S22 S11
41
42
43
Frequency (GHz)
TGA1073C Typical RF Performance (Fixtured)
50 P1dB 48 46 44 VD = +5V, +6V, +7V 42 40 38 IMR3 @ VD = +6V 36 34 32 30 36 37 38 39 40 41 42 30 27 24 21 18 15 12 9 6 3
Output P1dB Saturated Output Power Saturated PAE Output OTOI IMR3 @ SCL = P1dB - 10dB Input Return Loss Output Return Loss Reverse Isolation Quiescent Current
dBm dBm % dBm dBc dB dB dB mA
24 26 23
25 27 22 34 34 -10 -8 -35
26 28 20
225
240
260
Frequency (GHz) 1
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
IMR3 @ SCL=P1dB-10dB (dBc)
Output Power @ P1dB (dBm)
Parameter Small Signal Gain Gain Flatness
Unit +5V Supply +6V Supply +7V Supply dB 15 dBpp 1
Product Datasheet
TGA1073C-SCC
MAXIMUM RATINGS SYMBOL V+ I
+
PARAMETER 5/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VALUE 8V 480 mA 23 dBm 3.84 W 150 0C 320 C -65 to 150 0C
0
NOTES 1/ 4/ 2/ 3/
PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/
Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. This value reflects an estimate. Actual value will be inserted as soon as it is determined. These ratings represent the maximum operable values for this device.
DC SPECIFICATIONS (100%) (TA = 25 C + 5 C) NOTES SYMBOL IDSS1 GM1 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3-6| |VBVGD1,2| |VBVGS1| TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD 40 88 0.5 0.5 0.5 11 11 LIMITS MAX 188 212 1.5 1.5 1.5 30 30 mA mS V V V V V UNITS
VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
2
Product Datasheet
TGA1073C-SCC
RF SPECIFICATIONS (T A = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 240mA 36 - 39 GHz 40 GHz 37 GHz 38.5 GHz 40 GHz 36 - 40 GHz 36 - 40 GHz VALUE MIN 12 9 23 23 21 TYP 15 14 26 26 25 -10 -8 33 MAX dB dB dBm dBm dBm dB dB dBm UNITS
1/
SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION
1/ 1/
INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT THIRD ORDER INTERCEPT
1/
RF probe data is taken at 1 GHz steps.
RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside of c/p) BIAS CONDITIONS VD (V) ID (mA) 6 240 PDISS (W) 1.44 RJC (C/W) 32.43 TCH (C) 116.7 TM (HRS) 2.1 E7
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
3
Product Datasheet
TGA1073C-SCC Mechanical Characteristics
7
6
5
1
2
4
8
3
Units: millimeters (inches) Thickness: 0.1016 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.0508 (0.002) Bond Pad #1 Bond Pad #2 Bond Pads #3, 4, 5 Bond Pads #6, 7, 8 (RF Input) (RF Output) (VD) (VG) 0.100 x 0.130 (0.004 x .005) 0.100 x 0.130 (0.004 x .005) 0.100 x 0.100 (0.004 x .004) 0.100 x 0.100 (0.004 x .004)
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
4
Product Datasheet
TGA1073C-SCC
1F Cap on Supply Line
VG
0.01F
100pF 100pF
RF In
RF Out
100pF
100pF 1F Cap on Supply Line
0.01F
VD
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
5
Product Datasheet
TGA1073C-SCC
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
6

▲Up To Search▲

Price & Availability of TGA1073C

	To Download TGA1073C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .